Stacked chip package structure with leadframe having inner leads with transfer pad

ABSTRACT

The present invention provides a stacked chip package structure with leadframe having inner leads with transfer pad, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, wherein the die pad is provided between the plurality of inner leads arranged in rows facing each other and vertically distant from the plurality of inner leads; an offset chip-stacked structure formed with a plurality of chips stacked together, the offset chip-stacked structure being set on the die pad and electrically connected to the plurality of inner leads arranged in rows facing each other; and an encapsulant covering the offset chip-stacked structure and the leadframe, the plurality of outer leads extending out of said encapsulant; the improvement of which being that the inner leads of the leadframe are coated with an insulating layer and a plurality of metal pads are selectively formed on the insulating layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an offset chip-stacked packagestructure, and more particularly, to an offset chip-stacked structurewith leadframe having inner leads with transfer pad.

2. Description of the Prior Art

In semiconductor post-processing, many efforts have been made forincreasing scale of the integrated circuits such as memories whileminimizing the occupied area. Accordingly, the development ofthree-dimensional (3D) packaging technology is in progress and the ideaof making up a chip-stacked structure has been disclosed.

The prior art has taught that a chip-stacked structure can be formed byfirstly stacking a plurality of chips and then electrically connectingthe chips to the substrate in a wire-bonding process. FIG. 1A is across-sectional view of a prior chip-stacked package structure stackedby chips of same or similar size. As shown in FIG. 1A, a conventionalchip-stacked package structure 100 includes a package substrate 110,chips 120 a and 120 b, a spacer 130, the wires 140, and an encapsulant150. The package substrate 110 has many pads 112 on it and the chips 120a and 120 b are also respectively provided with pads 122 a and 122 barranged in peripheral type. The chip 120 a is provided on the substrate110, while the chip 120 b is provided on the chip 120 a with a spacer130 intervened there-between. The chip 120 a is electrically connectedto the substrate 110 by bonding two ends of one of the wires 140 to thepads 112 and 122 a respectively. The chip 120 b is electricallyconnected to the substrate 110 in similar manner. The encapsulant 150 isthen provided on the substrate 110 to cover the chips 120 a and 120 band the wires 140.

Since the pads 122 a and 122 b are respectively provided at theperipheral of the chip 120 a and the 120 b, there is a need to apply thespacer 130 to prevent the chip 120 b from directly contacting with thechip 120 a for performing the subsequent wire-bonding. However, the useof spacer 130 increases the thickness of the chip-stacked packagestructure 100.

Another prior chip-stacked package structure for different-sized chipshas been disclosed. Referring to FIG. 1B, another conventionalchip-stacked package structure 10 includes a package substrate 110,chips 120 c and 120 d, the wires 140, and an encapsulant 150. Thesubstrate 110 has pads 112 on it. The chip 120 c is larger than the chip120 d in size. The chips 120 c and 120 d are respectively provided withperipherally arranged pads 122 c and 122 d. The chip 120 c is providedon the substrate 110 while the chip 120 d is provided on the chip 120 c.The chip 120 c is electrically connected to the substrate 110 by bondingtwo ends of one of the wires 140 to the pads 112 and 122 c respectively.The chip 120 d is electrically connected to the substrate 110 in similarmanner. The encapsulant 150 is then provided on the substrate 110 tocover the chips 120 c and 120 d and the wires 140.

Since chip 120 d is smaller than chip 120 c, chip 120 d would not coverthe pads 122 c of the chip 120 c when the chip 120 d is stacked on thechip 120 c. However, the condition that the upper chip must have sizesmaller than that of the lower chip limits number of the chips to bestacked in the chip-stacked package structure 10.

In other words, the above-mentioned chip-stacked package structures havedrawbacks of either increasing thickness or limiting number of the chipsto be stacked. Moreover, there are also other problems that may lowerreliability and yield of the chip-stacked structures during processingwhen wire-jumping or wire-crossing bonding of the chips is considered.For example, a high-pressured mold-flow injection during molding maycause the jumping or crossing wires to shift and become short.

SUMMARY OF THE INVENTION

In view of the drawbacks and problems of the prior chip-stacked packagestructure as mentioned above, the present invention provides a newthree-dimensional chip-stacked structure for packaging multi-chips withsimilar size.

It is an object of the present invention to provide an offsetchip-stacked structure for packaging with leadframe having the innerleads formed with a plurality of metal pads and so as to make circuitdesign more flexible and gain higher reliability.

It is another object of the present invention to provide an offsetchip-stacked structure for packaging with leadframe having bus bar andso as to make circuit design more flexible and gain higher reliability.

According to abovementioned objects, the present invention provides achip-stacked package structure for leadframe having inner leads formedwith transfer pads, comprising: a leadframe composed of a plurality ofinner leads arranged in rows facing each other, a plurality of outerleads, and a die pad, wherein the die pad is provided between theplurality of inner leads arranged in rows facing each other and isvertically distant from the plurality of inner leads; an offsetchip-stacked structure formed with a plurality of chips stackedtogether, the offset chip-stacked structure being set on the die pad andelectrically connected to the plurality of inner leads arranged in rowsfacing each other; and an encapsulant covering the offset chip-stackedstructure and the leadframe, the plurality of outer leads extending outof said encapsulant; the improvement of which is that the inner leads ofthe leadframe are coated with an insulating layer and a plurality ofmetal pads are selectively formed on the insulating layer.

The present invention then provides a leadframe structure with innerleads having transfer pads, comprising a plurality of inner leadsarranged in rows facing each other, a plurality outer leads, and a diepad provided between the plurality of inner leads and vertically distantfrom the inner leads. The improvement of which is that the inner leadsare partially coated with an insulation layer selectively formed with aplurality of metal pads.

The present invention further provides a leadframe structure comprisinga plurality of inner leads and a plurality of outer leads. The pluralityof inner leads comprises a plurality of first inner leads in paralleland a plurality of second inner leads in parallel. The ends of firstinner leads and second inner leads are arranged in rows facing eachother at a distance. The first inner leads are equipped with a down-setstructure, which results in different vertical heights of the positionof the end of first inner leads and the position of the end of secondinner leads. The improvement of which is that the first inner leads orthe second inner leads or the ends of the first and the second innerleads are partially coated with an insulation layer selectively formedwith a plurality of metal pads.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram schematically showing a conventional chip-stackedpackage structure.

FIG. 2A is a top-elevational view schematically showing the chip-stackedstructure according to the present invention.

FIG. 2B is a cross-sectional view schematically showing the chip-stackedstructure according to the present invention.

FIGS. 2C to 2E are cross-sectional views schematically showing theoffset chip-stacked structure according to the present invention.

FIGS. 3A to 3C are diagrams schematically showing the redistributionlayer formed in a process according to the present invention.

FIGS. 4A to 4B are cross-sectional views schematically showing thebonding area on the redistribution layer according to the presentinvention.

FIGS. 5A to 5C are cross-sectional views schematically showing an offsetchip-stacked structure with redistribution layer according to thepresent invention.

FIG. 6 is a top-elevational view schematically showing an offsetchip-stacked package structure according to the present invention.

FIGS. 7A to 7B are top-elevational views schematically showing an offsetchip-stacked package structure according to another embodiment of thepresent invention.

FIGS. 8A to 8B are top-elevational views schematically showing an offsetchip-stacked package structure according to another embodiment of thepresent invention.

FIGS. 9A to 9B are top-elevational views schematically showing an offsetchip-stacked package structure according to still another embodiment ofthe present invention.

FIG. 10 is a cross-sectional view schematically showing the offsetchip-stacked package structure in FIG. 6 according to the presentinvention.

FIG. 11 is a cross-sectional view schematically showing an offsetchip-stacked package structure according to an embodiment of the presentinvention.

FIG. 12 is a cross-sectional view schematically showing an offsetchip-stacked package structure according to another embodiment of thepresent invention.

FIG. 13 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 14 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 15 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 16 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 18 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 19 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 20 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 21 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 22 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 23 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 24 is a top-elevational view schematically showing a leadframeaccording to an embodiment of the present invention.

FIG. 25 is a cross-sectional view schematically showing the leadframe inFIG. 24 according to the present invention.

FIG. 26 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 27 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

FIG. 28 is a cross-sectional view schematically showing an offsetchip-stacked structure according to another embodiment of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENT

The present invention will now be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsare shown. In the following, the well-known knowledge regarding thechip-stacked structure of the invention such as the formation of chipand the process of thinning the chip would not be described in detail toprevent from arising unnecessary interpretations. However, thisinvention will be embodied in many different forms and should not beconstrued as limited to the embodiments set forth herein.

According to the semiconductor packaging process, a Front-End-Processexperienced wafer is performed a thinning process firstly to reduce thethickness to a value between 2 mil and 20 mil, and then the polishedwafer is applied with a polymer material such as a resin or a B-Stageresin by coating or printing. Next, a post-exposure baking or lightingprocess is applied to the polymer material so that the polymer materialbecomes a viscous semi-solidified gel-like material. Subsequently, aremovable tape is attached to the viscous semi-solidified gel-likematerial and then the wafer is sawed into chips or dies. At last, thesechips or dies are stacked on and connected to a substrate to form achip-stacked structure.

Referring to FIGS. 2A and 2B, a chip 200 experiencing theabove-mentioned processes has an active surface 210 and a back surface220 in opposition to the active surface 210 with an adhesive layer 230formed on the back surface 220. It is to be noted that the adhesivelayer 230 is not limited to the above-mentioned semi-solidified gel-likematerial and can be any adhesive material, such as die-attached film,for connecting the chip 200 and a substrate together. Moreover, theactive surface 210 is thereon provided with a plurality of pads 240arranged along a side edge. Accordingly, an offset chip-stackedstructure 30 as shown in FIG. 2C can be formed. The offset chip-stackedstructure 30 is a ladder-like structure formed by aligning the side edgeof upper chips with the edge line 260 of the bonding area 250 on lowerchips. The edge line 260 herein is a line for reference only but not aline that exists on chip 200.

Referring to FIG. 2D, the uppermost chip of the structure 30 can furtherhave same pads as the pads 240 on the other side for providing moreconnections with the substrate. Referring to FIG. 2E, the size of theuppermost chip of the structure 30 can be smaller than that of the lowerone. The arrangement of the pads 240 or the size of the chips describedherein is for embodying but not limiting the invention. Any chip-stackedstructure satisfying the above-mentioned statement would be regarded asan aspect of the invention.

Referring to FIGS. 3A to 3C, the process of making a chip withredistribution layer is disclosed. According to the present invention, aredistribution layer (RDL) is formed with pads provided along a sideedge of the chip and the details are described as follows.

As shown in FIG. 3A, the chip 310 has first pads 312 a and second pads312 b on the active surface and along side edges. The first pads 312 aare pads located inside a bonding area 320, while the second pads 312 bare pads located outside the bonding area 320. As shown in FIG. 3B, afirst passivation layer 330 with a plurality of first openings 332 forexposing the first pads 312 a and the second pads 312 b is first formedon the chip 310, and a redistribution layer 340 with a plurality ofconductive wires 342 and a plurality of third pads 344 is then formed onthe first passivation layer 33. The third pads 344 are located insidethe bonding area 320 and the conductive wires 342 electrically connectthe second pads 312 b and the third pads 344. The redistribution layer340 is made up of conductive materials such as gold, copper, nickel,titanium tungsten, titanium or others. As shown in FIG. 3C, a whole chipstructure 300 is completed by forming a second passivation layer 350with a plurality of second openings 352 on the redistribution layer 340to cover the area rather than the first pads 312 a and the third pads344 but expose the first pads 312 a and the third pads 344.

It is to be noted that the first pads 312 a and the second pads 312 bcan be arranged on surface of the chip 310 not only in theabove-mentioned peripheral type but also in an area array type or othertypes rather than the above-mentioned types, provided that the secondpads 312 b are electrically connected with the third pads 344 via theconductive wires 342. Moreover, the third pads 344 can be arranged in amanner of being along side edge of the chip 310 and in parallel to thepads 312 a such as shown in FIG. 3B or other manners provided that thethird pads 344 are located inside the bonding area 320.

Referring now to FIGS. 4A and 4B, which are cross-sectional views drawnalong section lines A-A′ and B-B′. As shown in FIGS. 4A and 4B, thewhole chip structure 300 is composed of the chip 310 and theredistribution layer 400. The redistribution layer 400 is composed offirst passivation layer 330, the redistribution layer 340, and thesecond passivation layer 350. The bonding area 320 of the chip 310 is aside edge adjacent to the chip 310. Moreover, the chip 310 has aplurality of first pads 312 a and second pads 312 b, wherein the firstpads 312 a are inside the bonding area 320 and the second pads 312 b areoutside the bonding area 320.

The first passivation layer 330 disposed on the chip 310 has a pluralityof first openings 332 to expose these first pads 312 a and second pads312 b. The redistribution layer 340 with a plurality of third pads 344is disposed on the first passivation layer 330 and extends from secondpads 312 b to bonding area 320, where the third pads are located. Thesecond passivation layer 350 covers the redistribution layer 340 andexpose first pads 312 a and third pads 344 through a plurality of secondopenings 352. Since the first pads 312 a and third pads 344 are in thebonding area 320, the area rather than the bonding area 320 on thesecond passivation layer 350 is capable of carrying another chipstructure and therefore accomplishing an offset chip-stacked structure30.

Referring to FIG. 5, shows an offset chip-stacked structure 50 of thepresent invention. An offset chip-stacked structure 50 includes aplurality of stacked chips 500. Each of the chips 500 is formed with aredistribution layer 400 so that each of the chips 500 can be providedwith pads inside the bonding area 320 on each chip. In this way, theoffset chip-stacked structure 50 is formed by aligning the side edge ofupper chips with an edge line of the bonding area 320 on lower chips andan adhesive layer 230 formed by a polymer material is used to connectany two chips among the plurality of chips 500. Moreover, as shown inthe present embodiment in FIG. 5B, the uppermost chip of the offsetchip-stacked structure 50 can further have same pads as the pads 312 onthe other side for providing more connections with the substrate and themethod for forming this kind of structure is as shown in FIG. 4.Referring to FIG. 5C, the uppermost chip of the offset chip-stackedstructure 50 can have size smaller than that of the lower one. Thearrangement of the pads 312 and 344 or the size of the chips 500described herein is for embodying but not limiting the invention. Anychip-stacked structure satisfying the above-mentioned statement would beregarded as an aspect of the invention. For example, each of the chips500 can be formed with bonding areas that are not only on the right sideas shown in FIGS. 5A to 5B but also on the left side.

In the following, two offset chip-stacked structures each connected withleadframes according to the present invention will be disclosed, inwhich the above-mentioned offset chip-stacked structure 50 will be takenas an example for illustration. However, the following descriptions canalso be applied to the above-mentioned offset chip-stacked structure 30.

Referring to FIG. 6, which is a plane view of a chip-stacked packagestructure of the present invention. As shown in FIG. 6, a chip-stackedpackage structure includes a leadframe 60 and an offset chip-stackedstructure 50. The leadframe 60 includes a plurality of inner leads 610arranged in rows facing each other, a plurality of outer leads (notshown) and a die pad 620 provided between the inner leads 610. Herein,the inner leads 610 and the die pad 620 are vertically at the same ordifferent height. According to this embodiment, the offset chip-stackedstructure 50 is fixedly connected to the die pad 620 with an adhesivelayer 230 and electrically connected to inner leads 610 of the leadframe60 via the metal wires 640. The adhesive layer 230 in the presentinvention is not limited to the above-mentioned semi-solidified gel-likematerial and can be any adhesive material, such as die attached film,for joining the offset chip-stacked structure 50 and the die pad 620together. Moreover, the pads 312 a and 344 in the bonding area 320 ofchip 500 can be arranged in single row, two rows, or other manners andis not limited in the present invention.

Referring to FIG. 6, an insulation layer 611 is further provided on thepartial position of inner leads 610 in the present invention and atleast one metal pad 613 is provided on the insulation layer 611, whichprovides the leadframe 600 in chip-stacked package structure of presentinvention with more contacts for electrical connections such as groundconnections or signal connections. With more transfer pads on innerleads 610, the circuit design can become more flexible and be appliedmore extensively.

The insulation layer 611 is formed by coating or printing a polymermaterial such as polyimide (PI) or by attaching a tape such as dieattached film. The metal pads 613 herein can be metal layers formed onthe insulation layer 611 by plating process or etching process. It is tobe noted that the insulation layer 611 of the present invention can beprovided on the entire inner leads 610, or formed only on part of theinner leads 610, or formed only on fragmental sections of the innerleads 610. Moreover, an insulation layer can be further formed on metalpads (insulation layer) 611 and metal pads can be further provided onthis insulation layer so that the inner leads 610 can be provided withmore transfer pads.

The description will go to the part of using the metal pads on innerleads 610 to accomplish jumping connections of metal wires 640.Referring again to FIG. 6, the pad with letter “b” (“b′”) and the padwith letter “c” (“c′”) on the chip 500 are connected to the inner lead6103 (6123) and the inner lead 6103 (6123) respectively. Apparently, themetal pads 613 on the inner leads 610 are respectively served astransferring pads for making jumping connections between the pad withletter “b” (“b′”) on the chip 500 and the inner lead 6103 (6123) andbetween the pad with letter “c” (“c′”) on the chip 500 and the innerlead 6102 (6122), and thus the metal wires 640 would not cross eachother. For example, the pad with letter “b” on chip 500 is firstconnected to the metal pad 613 on inner lead 6102 with a metal wire 640,and then the metal pad 613 on inner lead 6102 is connected to the innerlead 6103 with another metal wire 640. Thus, the connection of the padwith letter “b” and inner lead 6103 can be completed without crossingthe metal wire 640 connecting the pad with letter “c” and the inner lead6102. Then, the pad with letter “a” and the inner lead 6101 areconnected with a metal wire 640, the pad with letter “c” on chip 500 isconnected to the bus bar 6102, and then the pad with letter “d” and thebus bar 6102 are connected with another metal wire 640. Thus, theconnection of pad with letter “b” and the inner lead 6103 can becompleted without crossing another metal wire 640 connecting pad withletter “c” and inner lead 6102. Similarly, the pads with letter “b′” andletter “c′” on the other side edge are respectively connected to innerleads 6123 and 6122 by jumping metal wires 640 with metal pads 613serving as transferring pads.

Then, referring to FIGS. 7A and 7B, the leadframe 600 in thechip-stacked package structure of the present invention furthercomprises at least a bus bar 630 provided between the die pad 620 andthe plurality of inner leads 610 arranged in rows facing each other,wherein the bus bar 630 can be arranged in a stripe-shaped configurationas shown in FIGS. 6A and 6B or in a ring-shaped configuration (notshown). Moreover, the pads 312/344 inside the bonding area 320 of thechip 500 can be arranged in single row or two rows.

The description will go to the part of using the bus bar 630 and innerleads 610 to accomplish jumping connections of metal wires 640.Referring again to FIG. 7A, the pad on the chip 500 are connected to thebus bar 630 and the inner leads 610. Apparently, the bus bars 6301 and6302 are respectively served as transfer pads for ground connection formaking jumping connections between the pad with letter “a” and the innerlead 6101 and between the pad with letter “a′” and the inner lead 6121.Then, referring to the diagram showing the connection between pads withletter “c” (“c′”) on the chip 500 and the inner leads 6101 (6121) andbetween the pads with letter “d” (“d′”) on the chip 500 and the innerleads 6103 (6123). Apparently, in the present embodiment, the pads withletter “c” and “c′” on the chip 500 can be first connected to the metalpads 6131 on inner lead 6102 and the metal pads 6132 on inner lead 6122with a metal wire 640, and the metal pads 6131 and 6132 can then beconnected to the inner leads 6101 and 6121 with another metal wire 640;then the pads with letter “d” and “d′” can be first connected to themetal pads 6133 on inner lead 6103 and the metal pads 6134 on inner lead6123, and the metal pads 6133 and 6134 can then be connected to theinner leads 6104 and 6124 with another metal wire 640. Thus, theconnection of pads with letter “c” and “c′” and the inner leads 6101 and6121 can be completed without crossing another metal wire 640 connectingpad with letter “b” (‘b′”) and inner lead 6102 (6122). Also, theconnection of pads with letter “d” and “d′” and the inner leads 6104 and6124 can be completed without crossing another metal wire 640 connectingpad with letter “e” (‘e′”) and inner lead 6103 (6123).

Referring to FIG. 7B, the structure with more than one bus bar 630 isprovided to complete the jumping connection. In FIG. 7B, the pads withletter “c” (“c′”), “d” (“d′”), and “e” (“e′”) on the chip 500 areconnected to the inner leads 6101 (6121), 6104 (6124), and 6103 (6123),wherein the pads with letter “a” and “a′” are connected to the bus bars6301 and 6302 and served as transfer pads for ground connection.Apparently, in the present embodiment the bus bars 6301 and 6302 can beused for ground connection, and the bus bars 6305 and 6304 can be usedfor signal connection. For example, the pads with letter “c” and “c′” onchip 500 are first connected to the metal pad 6131 on inner lead 6102and the metal pad 6132 on inner lead 6122 with a metal wire 640, andthen the metal pads 6131 and 613 are connected to the inner leads 6101and 6121 with another metal wire 640. On the other hand, the pads withletter “d” and “d′” are first connected to the metal pad 6133 on innerlead 6103 and the metal pad 6134 on inner lead 6123 with a metal wire640, and then the metal pads 6133 and 6134 are connected to the innerleads 6104 and 6124 with another metal wire 640. And then, the pads withletter “e” and “e′” are first connected to the bus bars 6305 and 6304with a metal wire 640, and then the bus bars 6305 and 6304 are connectedto the inner leads 6103 and 6123 with another metal wire 640. Thus, theconnection of pads with letter “c” and “c′” and the inner leads 6101 and6121 can be completed without crossing another metal wire 640 connectingpad with letter “b” (‘b′”) and inner lead 6102 (6122). Also, theconnection of pads with letter “d” and “d′” and the inner leads 6104 and6124 can be completed without crossing another metal wire 640 connectingpad with letter “e” (‘e′”) and inner lead 6103 (6123).

Consequently, the metal pads 613 (i.e. 6131˜6134) on inner leads ofleadframe 600 and bus bars 630 (i.e. 6301˜63010) according to thepresent invention provides a plurality of transfer pads for jumpingconnections to prevent metal wires from crossing each other and avoidunnecessary short. Meanwhile, the metal pads 613 and bus bars 630 makethe circuit design more flexible and raise the reliability in packageprocessing.

In the following, referring to FIGS. 8A and 8B, which are plain views ofanother embodiment of chip-stacked package structure of the presentinvention. As shown in FIGS. 8A and 8B, the chip-stacked packagestructure comprises a leadframe 600 and an offset chip-stacked structure50. The leadframe 600 is composed of a plurality of inner leads 610arranged in rows facing each other, a plurality of outer leads (notshown), and a die pad 620 provided between the plurality of inner leads610. The plurality of inner leads and the die pad 620 can be verticallydistant or at the same height. In the present embodiment, an insulationlayer 611 is further provided on the partial position of inner leads 610and at least one metal pad 613 is provided on the insulation layer 611,which provides the leadframe 600 with more contacts for electricalconnections such as power connections, ground connections, or signalconnections. With more transfer pads 613 on inner leads 610, the circuitdesign can become more flexible and be applied more extensively.Moreover, in the present embodiment, the leadframe 600 can furthercomprise at least one bus bar 630 provided between the die pad 620 andthe plurality of inner leads 610 arranged in rows facing each other,wherein at least one bus bar 630 can be arranged in a stripe-shapedconfiguration and each stripe-shaped bus bar 630 is formed by aplurality of metal fragments (i.e. 6301˜63010) as shown in FIGS. 8A and8B; or the bus bars 630 can also be arranged in a ring-shapedconfiguration and each ring-shaped bus bar 630 is formed by a pluralityof metal fragments. The shape of bus bars is not limited in the presentinvention. Moreover, as described above, the pads 312/344 inside thebonding area 320 of the chip 500 can be arranged in single row or tworows and is not limited in the present invention. Furthermore, theleadframe 600 is provided with many bus bars 630 formed by independentmetal fragments (i.e. 6301˜6306) and these metal fragments can all beused for electrical connections such as power connections, groundconnections, or signal connections, and thus the circuit design can bemore flexible and applied more extensively.

The description will go to the part of using the bus bar 630 toaccomplish jumping connections of metal wires 640. Referring again toFIG. 8A, the pads on the offset chip-stacked structure 50 are connectedto the inner leads of the leadframe. Apparently, the metal pads 613 onthe inner leads 610 and the plurality of metal fragments (such as6301˜6306) that form the bus bar 630 are served as transfer pads formaking jumping connections between the pads with letters from “a” (“a′”)to “f” (“f′”) and the inner leads 6101 (6121) to inner leads 6105 (6125)without crossing metal wires 640. For example, the pad with letter “a”on the offset chip-stacked structure 50 is first connected to the metalfragment 6301 of bus bar 630 with a metal wire 640, and this metalfragment 6301 is used for ground connection; then the pad with letter“b” is connected to the inner lead 6101; then the pad with letter “c” onthe offset chip-stacked structure 50 is connected to the metal fragment6303 of bus bar 630 with a metal wire 640, and the metal fragment 6303of bus bar 630 is connected to the inner lead 6103 with another metalwire 640; subsequently, the pad with letter “d” on the chip 500 isconnected to the metal pad 6131 on the inner lead 6102 with a metal wire640, and the metal pad 6131 is connected to the inner lead 6101 withanother metal wire 640. Thus, the connection between the pads withletter “c” and “d” and the inner leads 6103 and 6101 can be made withoutcrossing the metal wires 640 between the pad with letter “c” and theinner lead 6103 and between the pad with letter “d” and the inner lead6101. Then, the jumping connection between the pad with letter “e” andthe inner lead 6105 is performed. The pad with letter “e” on the offsetchip-stacked structure 50 is connected to the metal fragment 6305 of busbar 630 with a metal wire 640, and the metal fragment 6305 of bus bar630 is connected to the inner lead 6105 with another metal wire 640.Thus the connection between the pad with letter “e” and the inner lead6105 can be made without crossing the metal wire 640 connecting the padwith letter “f” and the inner lead 6104. Similarly, the connection ofpads with letters “a′” to “f′” and the inner leads 6121 to 6125 can alsobe completed without crossing metal wires 640. The process of makingjumping connection is the same as what is described above and would notbe given unnecessary details.

Referring to FIG. 8B, more than one bus bar 630 are provided when moreof the pads on the offset chip-stacked structure 50 need jumpingconnection. FIG. 8B shows the connection between the pads on the offsetchip-stacked structure 50 and the inner leads. In the presentembodiment, an insulation layer 611 is further provided on the innerleads 610 and at least one metal pad 613 is provided on the insulationlayer 611. Apparently, at least one metal pad 613 and the bus bar 630formed by a plurality of metal fragments (such as metal fragments6301˜63010) are served as transferring pads for making jumpingconnections between the pads with letters “a/a′” to “f/f′” and the innerleads 610 without crossing metal wires 640. For example, the pad withletter “a” or “a′” on the offset chip-stacked structure 50 is firstconnected to the metal fragment 6305 or 6306 of bus bar 630 with a metalwire 640, and this metal fragment 6305 or 6306 is used for groundconnection; then the pad with letter “b” or “b′” on the offsetchip-stacked structure 50 is connected to the metal fragment 6301 or6302 of bus bar 630 with a metal wire 640, and the metal fragment 6301or 6302 of bus bar 630 is connected to the metal pad 6131 or 6132 on theinner lead 6102 or 6122 with another metal wire 640; and then the metalpad 6131 and the inner lead 6101 are connected to the inner lead 6104 or6124 with another metal wire 640. Subsequently, the pad with letter “d”or “d′” on the offset chip-stacked structure 50 is first connected tothe metal pad 6133 or 6134 on the inner lead 6103 or 6123 with a metalwire 640, and the metal pad 6133 or 6134 is connected to the inner lead6105 or 6125 with another metal wire.

Thus, the connection between the pad with letter “b” or “b′” and theinner lead 6102 or 6122 and the connection between the pad with letter“d” or “d′” and the inner lead 6105 or 6125 can be made without crossingthe metal wires 640 between the pad with letter “b” or “b′” and theinner lead 6102 or 6122 and between the pad with letter “d” or “d′” andthe inner lead 6105 or 6122. Then, the pad with letter “e” or “e′” isconnected to the metal fragment 6307 or 6308 of bus bar 630, and themetal fragment 6307 or 6308 of bus bar 630 is connected to the innerlead 6102 or 6122 with another metal wire 640. Thus, the connectionbetween the pad with letter “e” or “e′” and the inner lead 6102 or 6122can be made without crossing another metal wire 640 connecting the padwith letter “f” or “f′” and the inner lead 6103 or 6123.

Consequently, the plurality of metal pads 613 is located on the innerleads 610 of leadframe 600 and the bus bars 630 is formed by theplurality of metal fragments (i.e. 6301˜63010) that is provides aplurality of transfer pads for jumping connections to prevent the metalwires from crossing each other and avoid unnecessary short. Meanwhile,the metal pads 613 and the bus bars 630 make the circuit design moreflexible and raise the reliability in package processing.

In the following, referring to FIGS. 9A and 9B, which are plain views ofstill another embodiment of chip-stacked package structure of thepresent invention. As shown in FIGS. 9A and 9B, the chip-stacked packagestructure comprises a leadframe 600 and an offset chip-stacked structure50. The leadframe 600 is composed of a plurality of inner leads 610arranged in rows facing each other, a plurality of outer leads (notshown), and a die pad 620 provided between the plurality of inner leads610. The plurality of inner leads and the die pad 620 can be verticallydistant. In the present embodiment, the offset chip-stacked structure 50is set on the die pad 620, and the offset chip-stacked structure 50 isconnected to the inner leads 610 of the leadframe 600 with metal wires640.

Referring again to FIGS. 9A and 9B, an insulation layer 611 is furtherprovided on the inner leads 610 in leadframe 600 of the chip-stackedpackage structure of the present invention and at least one metal pad613 is further provided on the insulation layer 611, which provides theinner leads 610 with more transfer pads. With more transfer pads 613 oninner leads 610, the circuit design can become more flexible and beapplied more extensively. Moreover, an insulation layer 632 is furtherprovided on the bus bar 630 in the present invention and at least onemetal pad 634 is further provided on the insulation layer 632, whichprovides the bus bar 630 with more transfer pads and allows the circuitdesign to become more flexible and be applied more extensively.

It is to be noted that the bus bar 630 can be arranged in astripe-shaped configuration as shown in FIGS. 9A and 9B; or the bus bar630 can also be arranged in a ring-shaped configuration (not shown). Theshape of bus bars is not limited in the present invention. Moreover, asdescribed above, the pads 312 a/344 inside the bonding area 320 of thechip 500 can be arranged in single row or two rows and is not limited inthe present invention.

The description will go to the part of using metal wires 640 toaccomplish jumping connections. Apparently, the metal pads 613 on theinner leads 610 and the plurality of metal pads 634 on the bus bars 6301and 6302 are served as transfer pads for making jumping connectionsbetween the pads with letters from “a” (“a′”) to “f” (“f′”) and theinner leads 6101 (6121) to inner leads 6105 (6125) without crossingmetal wires 640. For example, the pad with letter “a” on the offsetchip-stacked structure 50 is first connected to the bus bar 6301 with ametal wire 640, and the bus bar 6301 is used for ground connection; thenthe pad with letter “b” is connected to the inner lead 6102; then thepad with letter “c” on the offset chip-stacked structure 50 is connectedto the metal pad 6131 on the inner lead 6102 with a metal wire 640, andthe metal pad 6131 is connected to the inner lead 6101 with anothermetal wire 640. Thus, the connection between the pad with letter “c” andthe inner lead 6101 can be made without crossing the metal wires 640between the pad with letter “c” and the inner lead 6101 and between thepad with letter “b” and the inner lead 6102.

In the following, the pad with letter “d” on the offset chip-stackedstructure 50 is connected to the metal pad 6133 on the inner lead 6103with a metal wire 640, and the metal pad 6133 is connected to the innerlead 6104 with another metal wire 640. Then the jumping connectionbetween the pad with letter “e” and the inner lead 6105 is performed.The pad with letter “e” on the offset chip-stacked structure 50 is firstconnected to the metal pad 6135 on the inner lead 6104 with a metal wire640, and then the metal pad 6135 is connected to the inner lead 6105with another metal wire 640. Finally, the jumping connection between thepad with letter “f” and the inner lead 6103 is performed. The pad withletter “f” on the offset chip-stacked structure 50 is first connected tothe metal pad 6341 of the bus bar 6301 with a metal wire 640, and thenthe metal pad 6341 of the bus bar 6301 is connected to the inner lead6103 with another metal wire 640. Thus the connection between the padswith letters “d”, “e”, and “f” and the inner leads 6103, 6104, 6105 canbe made without crossing the metal wire 640 connecting the pad withletter “f” and the inner lead 6103. Similarly, the connection of padswith letters “a′” to “f′” and the inner leads 6121 to 6125 can also becompleted without crossing metal wires 640. The process of makingjumping connection is the same as what is described above and would notbe given unnecessary details.

Referring to FIG. 9B, more than one bus bar 630 are provided when moreof the pads on chip 500 need jumping connection. In the presentembodiment, the inner leads 610 are provided with a plurality of metalpads 611 and the plurality of bus bars 630 are also provided with aplurality of metal pads 634 as transfer pads, wherein an insulationlayer is provided between the metal pads 611 and the inner leads 611 andbetween the metal pads 634 and the bus bars 630 for insulation. Thejumping connection in the present embodiment is the same as that in FIG.9A and would not be given unnecessary details.

It is to be noted that the offset chip-stacked structure 50 is set onthe leadframe 600 and the chips 500 can be that having same size andperforming same function such as memory chips or chips having differentsizes and performing different functions such as the case shown in FIGS.2E and 5C (the chips on the uppermost layer being drive chips and therest being memory chips). The detailed description for size and functionof these chips is omitted hereinafter.

Referring to FIG. 10, which is a cross-sectional view of the offsetchip-stacked package structure in FIG. 6 drawn along section line A-A.As shown in FIG. 10, the leadframe 60 and the offset chip-stackedstructure 50 are connected with a plurality of metal wires 640. Theleadframe 60 is composed of a plurality of inner leads 610 arranged inrows facing each other, a plurality of outer leads (not shown), and adie pad 620 provided between the plurality of inner leads 610. Theplurality of inner leads and the die pad 620 can be vertically distant.In the present embodiment, the inner leads 610 are further provided withan insulation layer 611 and the insulation layer 611 is further providedwith at least one metal pad 613. The inner leads 610 are thus providedwith more transfer pads, which allows the circuit design to become moreflexible and be applied more extensively.

As shown in FIG. 10, the metal wire 640 a has one end that connected tothe first pad 312 a or the third pad 344 of the chip 500 a, and has theother end connected to the first pad 312 a or the third pad 344 of thechip 500 b via a wire-bonding process. Similarly, the metal wire 640 bhas one end that connected to the first pad 312 a or the third pad 344of the chip 500 b and has the other end connected to the first pad 312 aor third pad 344 of the chip 500 c via a wire-bonding process. The metalwire 640 c has one end that connected to the first pad 312 a or thethird pad 344 of the chip 500 c and has the other end connected to thefirst pad 312 a or third pad 344 of the chip 500 d via a wire-bondingprocess. The metal wire 640 d has one end that connected to the firstpad 312 a or third pad 344 of the chip 500 a and has the other endconnected to the inner leads 610 (inner lead 6101 or 6121 for example)of leadframe 600 via a wire-bonding process. In this way, the chips 500a, 500 b, 500 c and 500 d are electrically connected to the leadframe600 when the wire-bonding processes of the metal wires 640 a, 640 b, 640c, and 640 d are completed. These metal wires 640 a, 640 b, 640 c, and640 d can be gold made wires in one example.

Moreover, the inner leads 610 of the leadframe 600 in the presentembodiment is provided with metal pads 613 as transferring pads forelectrical connections such as power connections, ground connections, orsignal connections. For example, when the metal pads 613 are used forsignal connection, the metal wire 640 e has its one end connected to thepads (pad with letter “b′” for example) of the chip 500 a and has theother end connected to the metal pads 613 (metal pad 6132 for example),and the metal wire 640 f has its one end connected to the metal pad 6132and has the other end connected to one of the inner leads (inner lead6123 for example). Moreover, the uppermost chip 500 d of the structure50 can further have same pads on the other side of it such as thearrangement shown in FIGS. 2D and 5B. Therefore, on the other side ofchip 500 a, a plurality of metal wires 640 g are used to connect thechip 500 a (pad with letter “a” for example) and the inner leads 610(inner lead 6101 for example), while a metal wire 640 h has its one endconnected to the pads (pad with letter “b” for example) of chip 500 aand the other end connected to the metal pads 613 (metal pad 6131 forexample) and a metal wire 640 i is used to connect the metal pad 6131and one of the inner leads 610 (inner lead 6103 for example). By usingmetal pads 613 as transfer pads, the metal wires need not cross othermetal wires and the degree of camber angle of the metal wires would notbe increased, and thus the flexibility in the circuit design orapplication is enabled and the yield and reliability in packageprocessing can be raised.

It is to be noted that the chip 500 b is stacked on and adhered to thearea outside the bonding area 320 of the chip 500 a via a polymermaterial made adhesive layer 230 such as the arrangement shown in FIGS.5A to 5C. However, the wire-bonding sequence of the metal wires 640 isnot limited herein, which means it is also allowable to first bond theuppermost chip 500 d and finally bond the lowermost chip 500 a and thenconnect the chip 500 a with the leadframe 600.

Then, referring to FIG. 11, which is a cross-sectional view of theoffset chip-stacked package structure in FIG. 7A or 8A drawn alongsection lines A-A. As shown in FIG. 11, the leadframe 600 and the offsetchip-stacked structure 50 are connected with a plurality of metal wires640. The leadframe 600 is composed of a plurality of inner leads 610arranged in rows facing each other, a plurality of outer leads (notshown), and a die pad 620 provided between the plurality of inner leads610. The plurality of inner leads and the die pad 620 are verticallydistant. At least one bus bar 630 is provided between the inner leads610 and the die pad 620. In the present embodiment, the bus bar 630 andthe die pad 620 are vertically at the same height. In the presentembodiment, the inner leads 610 are further provided with an insulationlayer 611 and the insulation layer 611 is further provided with at leastone metal pad 613.

As shown in FIG. 11, the metal wire 640 a has one end that connected tothe first pad 312 a or third pad 344 of the chip 500 a and has the otherend connected to the first pad 312 a or the third pad 344 of the chip500 b via a wire-bonding process. Similarly, the metal wire 640 b hasone end that connected to the first pad 312 a or the third pad 344 ofthe chip 500 b and has the other end connected to the first pad 312 a orthe third pad 344 of the chip 500 c via a wire-bonding process. Themetal wire 640 c has one end that connected to the first pad 312 a orthe third pad 344 of the chip 500 c and has the other end connected tothe first pad 312 a or the third pad 344 of the chip 500 d via awire-bonding process. The metal wire 640 d has one end connected to apad of the chip 500 a and has the other end connected to the inner leads610 (inner lead 6102 or 6122 for example) of leadframe 600 via awire-bonding process. In this way, the chips 500 a, 500 b, 500 c and 500d are electrically connected to the leadframe 600 when the wire-bondingprocesses of the metal wires 640 a, 640 b, 640 c, and 640 d arecompleted. These metal wires 640 a, 640 b, 640 c, and 640 d can be goldmade wires in one example.

Moreover, the inner leads 610 of the leadframe 600 in the presentembodiment is provided with a plurality of metal pads 613 and bus bars630 as transferring pads for electrical connections such as powerconnections, ground connections, or signal connections. Take FIG. 8 forexample, when the bus bars 630 are used for electrical connection, themetal wire 640 e has its one end connected to a pad (pad with letter“b′” or “c′” or “e′” for example) of the chip 500 a and has the otherend connected to the bus bars 630 (bus bar 6302 for example), and themetal wire 640 f has its one end connected to the bus bar 6302 and hasthe other end connected to one of the inner leads (inner lead 6123 forexample). Then, the metal wire 640 g has its one end connected to a pad(pad with letter “d′” for example) of the chip 500 a and has the otherend connected to a metal pad (metal pad 6132 for example) on the innerlead 6122; and another metal wire 640 h connects the metal pad 6132 andanother inner lead (inner lead 6121 for example).

Moreover, the uppermost chip 500 d of the structure 50 can further havesame pads on the other side of it such as the arrangement shown in FIGS.2D and 5B. Therefore, on the other side of chip 500 d, a plurality ofmetal wires 640 i are used to connect a pad on the chip 500 d (pad withletter “b” for example) and the inner leads 610 (inner lead 6102 forexample), while a metal wire 640 j has its one end connected to a pad(pad with letter “c” for example) of chip 500 d and the other endconnected to a bus bar (bus bar 6303 for example) and a metal wire 640 kis used to connect the bus bar 6303 and one of the inner leads (innerlead 6103 for example). Then, a metal wire 640 m has its one endconnected to a pad (pad with letter “d” for example) of chip 500 a andthe other end connected to the metal pads on the inner lead 6102 (metalpad 6131 for example); and a metal wire 640 n connects the metal pad6131 and another inner lead (inner lead 6101 for example).

It is to be noted that the chip 500 b is stacked on and adhered to thearea outside the bonding area 320 of the chip 500 a via a polymermaterial made adhesive layer 230. However, the wire-bonding sequence ofthe metal wires 640 is not limited herein, which means it is alsoallowable to first bond the uppermost chip 500 d and finally bond thelowermost chip 500 a and then connect the chip 500 a with the leadframe600.

Then referring to FIGS. 12 to 14, show the cross-sectional views ofanother embodiment of offset chip-stacked structure of the presentinvention in FIG. 7A or 8A drawn along section lines A-A. FIGS. 12˜14and FIG. 11 described above are different in that the geometricalpositions of bus bar 630 of leadframe 600 between the inner leads 610and the die pad 620 are different. Take FIG. 12 of the presentembodiment for example, the bus bar 630 and the inner leads 610 arevertically at the same height. In FIG. 13 of the present embodiment, thebus bar 630, the inner leads 610, and the die pad 620 are vertically atdifferent heights. In FIG. 14 of the present embodiment, in theleadframe 600 the inner leads 610 and the die pad 620 are vertically atthe same height, which is different from FIGS. 11˜13, and the bus bar630, the inner leads 610, and the die pad 620 are vertically atdifferent heights. Apparently, FIGS. 12˜14 are different only in thestructure of leadframe 600, and the wire bonding and connectingprocesses via metal wires 640 between the leadframe 600 and the offsetchip-stacked structure 50 are the same and would not be givenunnecessary details.

Then, referring to FIG. 15, which is a cross-sectional view of anotherembodiment in FIG. 7B or 8B drawn along section lines B-B. FIG. 15 isdifferent from FIGS. 11˜14 in that more than one bus bar 630 is used inFIG. 15. The plurality of bus bars 630 can be arranged in astripe-shaped configuration as shown in FIG. 7B, and can also bearranged in a ring-shaped configuration. The shape of bus bars is notlimited herein. Similarly, the bus bars 630 in the present embodimentcan further be formed by a plurality of metal fragments (i.e.6301˜63010). Apparently, increasing the number of the bus bars andtherefore the number of transfer pads makes the connection of the pads(312 a; 344) on the structure 50 more flexible. This prevents the metalwires from increasing bending degrees and enables flexibility in thecircuit design or application and thus raises the yield and reliabilityin package processing. The process of using the metal wires 640 forconnection between the lead frame 600 and the structure 50 is similar towhat is described above and would not be given unnecessary detailsherein.

Then, referring to FIGS. 16˜19, show the cross-sectional views of offsetchip-stacked package structure in FIG. 9A drawn along section line A-A.As shown in FIG. 16, the leadframe 600 and the offset chip-stackedstructure 50 are connected with a plurality of metal wires 640. Theleadframe 600 is composed of a plurality of inner leads 610 arranged inrows facing each other, a plurality of outer leads (not shown), and adie pad 620 provided between the plurality of inner leads 610. The diepad 620 and the inner leads 610 are vertically at different heights. Atleast one bus bar 630 is provided between the inner leads 610 and thedie pad 620. In the present embodiment, the inner leads 610 are furtherprovided with an insulation layer 611 and the insulation layer 611 isfurther provided with at least one metal pad 613. The inner leads 610are thus provided with more transfer pads, which allows the circuitdesign to become more flexible and be applied more extensively.Moreover, the bus bar 630 in the present embodiment and the die pad 620are vertically at the same height. Wherein the bus bar 630 can bearranged in a stripe-shaped configuration as shown in FIGS. 9A and 9B,and can also be arranged in a ring-shaped configuration (not shown). Inorder to provide the leadframe 600 with more contacts for electricalconnections such as power connections, ground connections, or signalconnections, the bus bar 630 in the present embodiment is furtherprovided with an insulation layer 632 and the insulation layer 632 isfurther provided with at least one metal pad 634. The bus bar 630 isthus provided with more transfer pads, which allows the circuit designto become more flexible and be applied more extensively.

As shown in FIG. 16, the metal wire 640 a has one end that connected tothe first pad 312 a or the third pad 344 of the chip 500 a and has theother end that connected to the first pad 312 a or the third pad 344 ofthe chip 500 b via a wire-bonding process. Similarly, the metal wire 640b has one end that connected to the first pad 312 a or the third pad 344of the chip 500 b and has the other end connected to the first pad 312 aor the third pad 344 of the chip 500 c via a wire-bonding process. Themetal wire 640 c has one end that connected to the first pad 312 a orthe third pad 344 of the chip 500 c and has the other end connected tothe first pad 312 a or the third pad 344 of the chip 500 d via awire-bonding process. The metal wire 640 d has one end that connected toa pad (pad with the letter “b′” for example) of the chip 500 a and hasthe other end connected to the inner leads 610 (inner lead 6102 or 6122for example) of leadframe 600 via a wire-bonding process. In this way,the chips 500 a, 500 b, 500 c and 500 d are electrically connected tothe leadframe 600 when the wire-bonding processes of the metal wires 640a, 640 b, 640 c, and 640 d are completed. These metal wires 640 a, 640b, 640 c, and 640 d can be gold made wires in one example.

Moreover, the inner leads 610 of the leadframe 600 in the presentembodiment is provided with a plurality of metal pads 613 and the busbar 630 is also provided with a plurality of metal pads 634. The metalpads 613 and 634 can be served as transferring pads for electricalconnections such as power connections, ground connections, or signalconnections. Take FIG. 9A for example, when the metal pads 634 on thebus bar 630 are used for electrical connection, the metal wire 640 e hasits one end connected to a pad (pad with letter “f′” for example) of thechip 500 a and has the other end connected to the bus bar (bus bar 6342for example), and the metal wire 640 f has its one end connected to thebus bar 6342 and has the other end connected to one of the inner leads(inner lead 6123 for example). Then, the metal wire 640 g has its oneend connected to a pad (pad with letter “c′” for example) of the chip500 a and has the other end connected to a metal pad (metal pad 6132 forexample) on the inner lead 6122; and another metal wire 640 h connectsthe metal pad 6132 and another inner lead (inner lead 6121 for example).Moreover, the uppermost chip 500 d of the offset chip-stacked structure50 can further have same pads on the other side of it such as thearrangement shown in FIGS. 2D and 5B. Therefore, on the other side ofchip 500 d, a plurality of metal wires 640 i are used to connect a padon the chip 500 d (pad with letter “b” for example) and the inner leads610 (inner lead 6102 for example), while a metal wire 640 j has its oneend connected to a pad (pad with letter “f” for example) of chip 500 dand the other end connected to a bus bar (bus bar 6341 for example) anda metal wire 640 k is used to connect the bus bar 6341 and one of theinner leads (inner lead 6103 for example). Then, a metal wire 640 m hasits one end connected to a pad (pad with letter “d” for example) of chip500 a and the other end connected to a metal pad on the inner lead 6102(metal pad 6133 for example); and a metal wire 640 n connects the metalpad 6133 and another inner lead (inner lead 6104 for example).

Then, referring to FIGS. 17˜19, which is a cross-sectional view ofanother embodiment of offset chip-stacked package structure of thepresent invention in FIG. 9A drawn along section line A-A. FIGS. 17˜19and FIG. 16 described above are different in that the geometricalpositions of bus bar 630 of leadframe 600 between the inner leads 610and the die pad 620 are different. Take FIG. 17 of the presentembodiment for example, the bus bar 630 and the inner leads 610 arevertically at the same height. In FIG. 18 of the present embodiment, thebus bar 630, the inner leads 610, and the die pad 620 are vertically atdifferent heights. In FIG. 19 of the present embodiment, in theleadframe 600 the inner leads 610 and the die pad 620 are vertically atthe same height, which is different from FIGS. 16˜18, and the bus bar630, the inner leads 610, and the die pad 620 are vertically atdifferent heights. Apparently, FIGS. 17˜19 are different only in thestructure of leadframe 600, and the wire bonding and connectingprocesses via metal wires 640 between the leadframe 600 and the offsetchip-stacked structure 50 are the same and would not be givenunnecessary details.

Then, referring to FIG. 20, which is a cross-sectional view of anotherembodiment in FIG. 9B drawn along section line B-B. FIG. 20 is differentfrom FIGS. 16˜19 in that more than one bus bar 630 is used in FIG. 20.The plurality of bus bars 630 can be arranged in a stripe-shapedconfiguration as shown in FIG. 9B, and can also be arranged in aring-shaped configuration (not shown). The shape of bus bars is notlimited herein. Apparently, increasing the number of the bus bars andtherefore the number of transfer pads makes the connection of the pads(312 a; 344) on the structure 50 more flexible. This prevents the metalwires from increasing bending degrees and enables flexibility in thecircuit design or application and thus raises the yield and reliabilityin package processing. The process of using the metal wires 640 forconnection between the lead frame 600 and the structure 50 is similar towhat is described above and would not be given unnecessary detailsherein.

As described in the above embodiments, the number of the chips of thechip-stacked structure 50 is not so limited, and any person skilled inthe art could manufacture a chip-stacked structure including at leastthree chips according to the above-disclosed method. Meanwhile, thedirection toward which the offset of each chip occurs in forming thestructure 50 is not so limited by the above-disclosed embodiments. Thechip-stacked structure can be formed with each chip having an offsettoward the direction opposite to the original one disclosed in the aboveembodiments. The connection methods for the chips of the offsetchip-stacked structure 70 and between the structure 70 and the leadframe600 and the wire-bonding method for the offset chip-stacked structure 70and the leadframe 600 using metal wires 640 are similar to thosedisclosed in the above-mentioned embodiments and would not be givenunnecessary details herein.

The inner leads 610 on leadframe 600 are arranged in rows facing eachother, and the inner leads 610 are provided with a plurality of metalpads 613. Therefore, the present invention further proposes acombination structure in which two offset chip-stacked structures withchips of each structure being offset toward opposite directions arecombined together. An example of such is shown in FIG. 21. Referring toFIG. 21, the structures 50 and 70 are provided together on a die pad 620of a leadframe 600. The connection method for the chips of thestructures 70 and 50 and the wire-bonding method for the chips and theleadframe are similar to that disclosed in the above-mentionedembodiments and would not be given unnecessary details herein.

Then, referring to FIGS. 22 and 23, apparently, the difference betweenFIG. 22 and FIG. 21 is that at least one bus bar 630 is provided in FIG.22 and a plurality of metal pads 634 can be selectively provided on thebus bar 630, as shown in FIG. 23. The connection methods for the chipsof the offset chip-stacked structures 50 and 70 and between thestructures and the leadframe 600 and the wire-bonding method for theoffset chip-stacked structures 50 and 70 and the leadframe 600 usingmetal wires 640 are similar to those disclosed in the above-mentionedembodiments and would not be given unnecessary details herein. Thenumber of pads for electrical connections is thus increased and theconnection of the pads (312 a; 344) on the structures 50 and 70 is alsomade more flexible. This prevents the metal wires from increasingbending degrees and enables flexibility in the circuit design orapplication and thus raises the yield and reliability in packageprocessing. It is to be noted that the height configuration of the innerleads 610, the die pad 620, and the bus bar 630 of leadframe 600 andrelated description above can also be applied in the embodiments inFIGS. 22 and 23.

It is to be noted again that in all the embodiments described above, theinsulation layer 611 on the inner leads 610 and the insulation layer 632on the bus bar 630 can both be formed by coating or printing a polymermaterial such as polyimide (PI) or by attaching a tape such as dieattached film. The metal pads 613 or 634 can be metal layers formed onthe insulation layers 611 and 632 by plating process and etchingprocess. It is to be noted that the insulation layers 611 and 632 can beformed on the entire inner leads 610 and the entire bus bar 630 orformed only on fragmental sections of the inner leads 610 and the busbar 630, which is not limited herein. Furthermore, another insulationlayer formed on the metal pads 611 and 634 and other metal pads formedon this another insulation layer would be allowed for adding moretransfer pads.

The present invention then provides a chip-stacked package structurewith unbalanced leadframe having inner leads 610 formed with a pluralityof transfer pads. Referring to FIG. 24, which is a cross-sectional viewof the leadframe of another embodiment of the present invention. Asshown in FIG. 24, the leadframe 600 is composed of a plurality of innerleads 610 arranged in rows facing each other and a plurality of outerleads 620. The inner leads 610 comprise a plurality of first inner leads615 in parallel and second inner leads 616 in parallel. The ends of thefirst inner leads 615 and the ends of the second inner leads 616 arearranged opposite each other at a distance, and the first inner leads615 and the second inner leads 616 thus are in rows facing each otherbut vertically at different heights. Moreover, an insulation layer 611is provided near the ends of first inner leads 615 and second innerleads 616 and at least one metal pad 613 is further provided on theinsulation layer 611.

Then, referring to FIG. 25, the first inner leads 615 is equipped with adownset structure formed by a platform portion 619 and a connectingportion 617, wherein the platform portion 619 and the second inner leads616 are vertically at the same height. Moreover, the shape of connectingportion 617 can be a slope or a near-vertical surface and is not limitedin the present invention. It is also to be noted that the platformportion 619 and the connecting portion 617 can also be part of firstinner leads 615.

Then, referring to FIG. 26, which is a cross-sectional view of an offsetchip-stacked package structure of the present invention. First, thefirst inner leads 615 of leadframe 600 and the offset chip-stackedstructure are connected via an adhesive layer 230. The second innerleads 616 are provided with an insulation layer 611 and the insulationlayer 611 is further provided with at least one metal pad 613.Apparently, the adhesive layer 230 in FIG. 26 is adhered to the backsurface of the chip 500, as shown in FIG. 2. Moreover, the adhesivelayer 230 can also be provided on the first inner leads 615 of leadframe600 and connected to the offset chip-stacked structure 50. In addition,the first inner leads 615 of leadframe 600 and the offset chip-stackedstructure 50 can also be connected via a tape, and more particularly, adie attached film.

After the connection of the leadframe 600 and the offset chip-stackedstructure 50 is made, the connection of metal wires is performed.Referring to FIG. 26, the metal wire 640 a has one end connected to apad (such as first pad 312 a or third pad 344 in FIG. 3) of the chip 500a and has the other end connected to the first pad 312 a or third pad344 of the chip 500 b via a wire-bonding process. Similarly, the metalwire 640 b has one end that connected to the first pad 312 a or thirdpad 344 of the chip 500 b and has the other end connected to the firstpad 312 a or third pad 344 of the chip 500 c via a wire-bonding process.The metal wire 640 c has one end that connected to the first pad 312 aor the third pad 344 of the chip 500 c and has the other end connectedto the first pad 312 a or third pad 344 of the chip 500 d via awire-bonding process. Then the metal wire 640 d electrically connectsthe chip 500 d and the first inner leads 615 of leadframe 600, and themetal wire 640 e electrically connects the chip 500 d and the secondinner leads 616. In this way, the chips 500 a, 500 b, 500 c and 500 dare electrically connected to the first inner leads 615 and second innerleads 616 of leadframe 600 when the wire-bonding processes of the metalwires 640 a, 640 b, 640 c, 640 d, and 640 e are completed. These metalwires 640 a, 640 b, 640 c, 640 d, and 640 e can be gold made wires.Then, a metal wire 640 f can selectively connect the chip 500 d and themetal pad 613 of the second inner leads 616, and another metal wire 640g is provided to complete the connection to one of the second innerleads 616. Finally, in the offset chip-stacked package structure inwhich the electrical connection is completed, an encapsulant 70 isprovided to cover the offset chip-stacked structure 50, the platformportion 619 and the second inner leads 616 of leadframe 600 with theouter leads 620 of leadframe 600 extending out of the encapsulant 70,and the chip-stacked package structure is thus formed.

In addition to the above-mentioned process, the connection of leadframe600 and offset chip-stacked structure 50 via metal wires 640 can also bemade by first performing the electrical connections of chips 500 a, 500b, 500 c, and 500 d via metal wires after the offset chip-stackedstructure 50 is formed. The process of connecting chips 500 a, 500 b,500 c, and 500 d is the same as that disclosed above. Then theconnection of metal wires is performed again after the electricallyconnected offset chip-stacked structure 50 is adhered to the leadframe600 for connecting the offset chip-stacked structure 50 and the innerleads 610 of leadframe 600.

As described in the above embodiments, the number of the chips of thechip-stacked structure 50 is not so limited, and any person skilled inthe art could manufacture a chip-stacked structure including at leastthree chips according to the above-disclosed method. Similarly, thechip-stacked structure 50 in the embodiment in FIG. 26 can also bechip-stacked structure 30. The wire bonding processes of chip-stackedstructures 30 and 50 with the leadframe 600 are the same and thereforewould not be given unnecessary details.

Referring to FIG. 27, which is a cross-sectional view of the offsetchip-stacked package structure of another embodiment of the presentinvention. As shown in FIG. 27, the leadframe 600 is composed of aplurality of inner leads 610 arranged in rows facing each other and aplurality of outer leads 620. The inner leads 610 comprise a pluralityof first inner leads 615 in parallel and second inner leads 616 inparallel. The ends of the first inner leads 615 and the ends of thesecond inner leads 616 are arranged opposite each other at a distance,and the first inner leads 615 and the second inner leads 616 thus are inrows facing each other but vertically at different heights. Referring toFIG. 27, the first inner leads 615 is equipped with a downset structureformed by a platform portion 618 and a connecting portion 617. A concaveladder-like structure 6161 is formed at the ends of the second innerleads 616 and the concave ladder-like structure 6161 is further providedwith an insulation layer 611 and the insulation layer is furtherprovided with at least one metal pad 613. The rest of the structure isthe same as the second inner leads 616 in FIG. 26. Apparently, thedifference between the present embodiment and FIG. 26 is that in thepresent embodiment, a concave ladder-like structure 6161 is formed atthe ends of the second inner leads 616. The end of the concaveladder-like structure 6161 is vertically lower than the second innerleads 616. Thus when the connection of metal wires 640 is performed, themetal wire 640 e connects the chip 500 d and the end of the concaveladder-like structure 615. The bending degree of metal wire 640 e isthus decreased. The wire bonding processes in FIGS. 26 and 27 are thesame and would not be given unnecessary details herein.

Then, referring to FIG. 28, which is a cross-sectional view of theoffset chip-stacked package structure of another embodiment of thepresent invention. The different between FIG. 27 and FIG. 28 is that thefirst inner leads 615 in FIG. 28 is further provided with an insulationlayer 611 and the insulation layer 611 is further provided with at leastone metal wire 613 and a protruding ladder-like structure 6162 is formedat the ends of the second inner leads 616. Apparently, the end of theprotruding ladder-like structure 6162 is vertically higher than thesecond inner leads 616. Thus when the connection of metal wires 640 isperformed, the metal wire 640 d connects the chip 500 d and the metalpad 613 on the first inner leads 615, and another metal wire 640 econnects the metal pad 613 on the first inner leads 615 and the end ofthe protruding ladder-like structure 6162. Thus a chip-stacked packagestructure is formed. The wire bonding processes in FIGS. 26, 27, and 28are the same and would not be given unnecessary details herein. It is tobe noted that the metal pad 613 can be provided on the first inner leads615 and the second inner leads 616. What is described above in FIGS. 26,27 and 28 are only embodiments of the present invention and should notbe used to limit the present invention.

While the invention has been described by way of examples and in termsof the preferred embodiments, it is to be understood that the inventionis not limited to the disclosed embodiments. To the contrary, it isintended to cover various modifications and similar arrangements aswould be apparent to those skilled in the art. Therefore, the scope ofthe appended claims should be accorded the broadest interpretation so asto encompass all such modifications and similar arrangements.

1. A chip-stacked package structure with leadframe having inner leadswith transfer pad, comprising: a leadframe, composed of a plurality ofinner leads arranged in rows facing each other, a plurality of outerleads, and a die pad, wherein said die pad is provided between saidplurality of inner leads arranged in rows facing each other and isvertically distant from said plurality of inner leads; an offsetchip-stacked structure formed with a plurality of chips stackedtogether, said offset chip-stacked structure being set on said die padand electrically connected to said plurality of inner leads arranged inrows facing each other; and an encapsulant, covering said offsetchip-stacked structure and said leadframe, said plurality of outer leadsextending out of said encapsulant; wherein partial position of saidinner leads of said leadframe is coated with an insulation layer and aplurality of metal pads are selectively formed on said insulation. 2.The chip-stacked package structure as set forth in claim 1, wherein saidmetal pads on said inner leads is formed on said insulation layer byplating process or etching process.
 3. A chip-stacked package structurewith leadframe having inner leads with transfer pad, comprising: aleadframe, composed of a plurality of inner leads arranged in rowsfacing each other, a plurality of outer leads, and a die pad, whereinsaid die pad is provided between said plurality of inner leads arrangedin rows facing each other and vertically distant from said plurality ofinner leads, partial position of said inner leads being further coatedwith an insulation layer and a plurality of metal pads being selectivelyformed on said insulation layer; an offset chip-stacked structure formedwith a plurality of chips stacked together, said offset chip-stackedstructure being set on said die pad and electrically connected to saidplurality of inner leads arranged in rows facing each other; and anencapsulant, covering said offset chip-stacked structure and saidleadframe, said plurality of outer leads extending out of saidencapsulant; wherein each of said chips in said offset chip-stackedstructure comprises: a chip with a bonding area, said bonding area beingadjacent to one side edge or two side edges of said chip, wherein saidchip is provided with a plurality of first pads in said bonding area anda plurality of second pads outside said bonding area; a firstpassivation layer provided on said chip, wherein said first passivationlayer is provided with a plurality of first openings for exposing saidplurality of first pads and said plurality of second pads; aredistribution layer provided on said first passivation layer, whereinsaid redistribution layer extends from said plurality of second pads tosaid bonding area and is provided with a plurality of third pads in saidbonding area; and a second passivation layer covering saidredistribution layer, wherein said second passivation layer is providedwith a plurality of second openings for exposing said plurality of firstpads and said plurality of third pads.
 4. A chip-stacked packagestructure with leadframe having inner leads with transfer pad,comprising: a leadframe, composed of a plurality of inner leads arrangedin rows facing each other, a plurality of outer leads, and a die pad,wherein said die pad is provided between said plurality of inner leadsarranged in rows facing each other and vertically distant from saidplurality of inner leads, partial position of said inner leads beingfurther coated with an insulation layer and a plurality of metal padsbeing selectively formed on said insulation layer; an offsetchip-stacked structure formed with a plurality of chips stackedtogether, said offset chip-stacked structure being set on said die padand electrically connected to said plurality of inner leads arranged inrows facing each other; an encapsulant, covering said offsetchip-stacked structure and said leadframe, said plurality of outer leadsextending out of said encapsulant; and at least a bus bar being providedbetween said plurality of inner leads arranged in rows facing each otherand said die pad, said bus bar being further coated with an insulationlayer and a plurality of metal pads being selectively formed on saidinsulation layer.
 5. A chip-stacked package structure with leadframehaving inner leads with transfer pad, comprising: a leadframe, composedof a plurality of inner leads arranged in rows facing each other, aplurality of outer leads, and a die pad, said die pad being providedbetween said plurality of inner leads arranged in rows facing each otherand vertically distant from said plurality of inner leads; a pluralityof offset chip-stacked structures, being set on said die pad andelectrically connected to said plurality of inner leads arranged in rowsfacing each other; and an encapsulant, covering said plurality of offsetchip-stacked structures and said leadframe, said plurality of outerleads extending out of said encapsulant; wherein partial position ofsaid inner leads in said leadframe is further coated with an insulationlayer and a plurality of metal pads are selectively formed on saidinsulation layer.
 6. The chip-stacked package structure as set forth inclaim 5, wherein said leadframe further comprises at least a bus barprovided between said plurality of inner leads arranged in rows facingeach other and said die pad.
 7. The chip-stacked package structure asset forth in claim 6, wherein said bus bar is formed by a plurality ofmetal fragments.
 8. A leadframe structure with inner leads havingtransfer pads, composed of a plurality of inner leads arranged in rowsfacing each other, a plurality of outer leads, and a die pad, said diepad being provided between said plurality of inner leads arranged inrows facing each other and being vertically distant from said pluralityof inner leads, the improvement of which being: partial position of saidplurality of inner leads being coated with an insulation layer and aplurality of metal pads being selectively formed on said insulationlayer.
 9. The leadframe structure as set forth in claim 8, furthercomprising a bus bar provided between said plurality of inner leadsarranged in rows facing each other and said die pad.
 10. The leadframestructure as set forth in claim 8, wherein said bus bar is furthercoated with an insulation layer and a plurality of metal pads areselectively formed on said insulation layer.
 11. The package structureas set forth in claim 8, wherein said bus bar and said die pad arevertically at the same height.
 12. The package structure as set forth inclaim 8, wherein said bus bar and said plurality of inner leads arevertically at the same height.
 13. The package structure as set forth inclaim 8, wherein said bus bar and said plurality of inner leads arrangedin rows facing each other and said die pad are vertically at differentheights.
 14. The package structure as set forth in claim 8, wherein saidbus bar is arranged in a ring-shaped configuration.
 15. The packagestructure as set forth in claim 8, wherein said bus bar is arranged in astrip-shaped configuration.
 16. A chip-stacked package structure,comprising: a leadframe, composed of a plurality of inner leads and aplurality of outer leads, said plurality of inner leads comprising aplurality of first inner leads in parallel and a plurality of secondinner leads in parallel, the ends of said plurality of first inner leadsand said plurality of second inner leads being arranged opposite eachother at a distance, said plurality of first inner leads being equippedwith a downset structure so that the ends of said first inner leads andof said second inner leads are vertically at different heights; achip-stacked structure fixedly connected to said plurality of firstinner leads, a plurality of metal wires being provided for electricallyconnecting metal pads and said plurality of first inner leads and saidplurality of second inner leads; and an encapsulant, covering saidchip-stacked structure and said plurality of inner leads, said pluralityof outer leads extending out of said encapsulant; the improvement ofwhich being: said plurality of first inner leads or said plurality ofsecond inner leads or near the ends of said plurality of first innerleads and said plurality of second inner leads being partially coatedwith an insulation layer and a plurality of metal pads being selectivelyformed on said insulation layer.
 17. The package structure as set forthin claim 16, wherein the ends of said plurality of second inner leadsare equipped with a concave ladder-like structure.
 18. The packagestructure as set forth in claim 16, wherein the ends of said pluralityof second inner leads are equipped with a protruding ladder-likestructure.
 19. A leadframe structure, composed of a plurality of innerleads and a plurality of outer leads, said plurality of inner leadscomprising a plurality of first inner leads in parallel and a pluralityof second inner leads in parallel, the ends of said plurality of firstinner leads and said plurality of second inner leads being arrangedopposite each other at a distance, said plurality of first inner leadsbeing equipped with a downset structure so that the ends of said firstinner leads and of said second inner leads are vertically at differentheights, the improvement of which being: said plurality of first innerleads or said plurality of second inner leads or near the ends of saidplurality of first inner leads and said plurality of second inner leadsbeing partially coated with an insulation layer and a plurality of metalpads being selectively formed on said insulation layer.